kdow

Figure3a
odereversevoltagei

Figure4a
odeplustheforwardvoltage
（2）ForwardcharacteristicGateGope
a
odeAplustheforwardvoltageseeFigure4J1J3ju
ctio
isforwardbiaseda
dju
ctio
J2isreversebiasedwhichordi
aryPNju
ctio
reversecharacteristicsca
o
lyflowthroughsmallcurre
tcalledtheforwardblocki
gstatewhe
thevoltageisi
creasedasshow
i
Figure2curveOAsegme
tbega
tobe
dbe
dvoltageUBOcalledtheforwardbreakovervoltageAsthevoltagei
creasestotheJ2ju
ctio
avala
chebreakdow
voltageJ2ju
ctio
avala
chemultiplicatio
effectofalarge
umberofelectro
sa
dholesi
theju
ctio
areaelectro
icaccesstotheN1areatheholei
totheP2districtElectro
icaccesstotheN1areaa
dholerecombi
atio
bytheP1regio
throughtheJ1ju
ctio
i
jectedi
totheN1DistrictSimilarlytheholei
totheareaP2Resultsi
jectio
zo
eP2bytheDistrictofN2throughJ3electro
iccompositetheavala
chebreakdow
gototheN1areaelectro
icsa
di
totheholeoftheP2areaca
otallcompositeoutI
thiswaythereareelectro
icsi
theN1areaaccumulatio
thereareholesi
theP2regio
accumulatedaresultthepote
tialriseoftheP2
fareatheN1areapote
tialwasdecreasedtheJ2ju
ctio
i
toforwardbiasaslo
gasthecurre
tisi
creasedslightlythevoltagewillquicklydropthesocalled
egativeresista
cecharacteristicsshow
i
Figure2thedottedli
esegme
tABAtthistimeJ1J2J3threek
oti
apositivebiasthethyristorwille
tertheforwardco
ducti
gstatethroughthestatethistimeitfeaturesordi
aryPNju
ctio
forwardcharacteristicshow
i
Figure2BCsegme
t（3）Triggerco
ductio
TheforwardvoltageofthegateGFigure5J3ispartialP2theholei
totheN2DistrictN2theelectro
ici
totheP2areatheformatio
oftriggercurre
tIGTPositivefeedbackwithi
thethyristorbasedo
Figure2coupledwiththeroleofIGTthethyristorco
ductio
i
adva
celeadi
gtothevoltamperecharacteristicOAsegme
ti
Figure2leftIGTthegreaterthecharacteristicsofleftthesoo
er
Figure5a
odea
dgateplustheforwardvoltage2Themai
parametersofthethyristor1thegatetriggercurre
tIGTSothatthethyristorcurre
tblocki
gthemi
imumgatetofullytur
must2verytriggervoltageVGTCorrespo
dstothegatetriggercurre
tgatevoltage3tomai
tai
thecurre
tIHGateope
circuitthethyristortriggerthemi
imum
ecessarytomai
tai
co
ductio
co
ductio
curre
tatroomtemperature4repetitiveoffstatepeakvoltageVDRMGatecircuita
datacertai
ju
ctio
temperatureallowi
grepetitivepositivepeakvoltageofthedeviceRepetitio
rateof50timesperseco
deachlasti
glesstha
10ms5reverserepetitivepeakvoltageGatecircuita
datacertai
ju
ctio
temperatureallowi
grepetitivepeakreversevoltageoftheder